Netsol的前身為韓國Samsung SRAM事業(yè)部，分立出來后一直致力于SRAM芯片的研發(fā)與創(chuàng)新標準，在SRAM領(lǐng)域擁有比較完整的產(chǎn)品線：Quadruple / DDR SRAM 改革創新， Synchronous SRAM（同步）， Asynchronous Fast SRAM（異步）平臺建設。 現(xiàn)在使用Netsol產(chǎn)品的都為一些電子工業(yè)巨頭所使用服務機製，如3Com，CISCO使用，ZTE大幅拓展，HUAWEI等。我們的同步高速SRAM產(chǎn)品可與 ISSI更加堅強，Cypress與時俱進，Lyontek之系列兼容替代，比如Netsol的S7R161882M型號的產(chǎn)品可替代Cypress的CY7C1312KV18型號的產(chǎn)品初步建立， 且在某些參數(shù)性能上有一定的優(yōu)勢實施體系。| Density | Org. | Part number | Operating | VDD(V) | Package |
| 144Mb | 4Mx36 | S7S4436T4M | QDR II+ | 1.8V | 165FBGA |
| 144Mb | 8Mx18 | S7S4418T4M | QDR II+ | 1.8V | 165FBGA |
| 144Mb | 4Mx36 | S7T4436T2M | QDR II+, ODT | 1.8V | 165FBGA |
| 144Mb | 8Mx18 | S7T4418T2M | QDR II+, ODT | 1.8V | 165FBGA |
| 144Mb | 4Mx36 | S7T4436T4M | QDR II+, ODT | 1.8V | 165FBGA |
| 144Mb | 8Mx18 | S7T4418T4M | QDR II+, ODT | 1.8V | 165FBGA |
| 144Mb | 4Mx36 | S7R443682M | QDR II | 1.8V | 165FBGA |
| 144Mb | 8Mx18 | S7R441882M | QDR II | 1.8V | 165FBGA |
| 144Mb | 16Mx9 | S7R440982M | QDR II | 1.8V | 165FBGA |
| 144Mb | 4Mx36 | S7R443684M | QDR II | 1.8V | 165FBGA |
| 144Mb | 8Mx18 | S7R441884M | QDR II | 1.8V | 165FBGA |
| 144Mb | 4Mx36 | S7S4436U2M | QDR II+ | 1.8V | 165FBGA |
| 144Mb | 8Mx18 | S7S4418U2M | QDR II+ | 1.8V | 165FBGA |
| 144Mb | 4Mx36 | S7S4436U4M | QDR II+ | 1.8V | 165FBGA |
| 144Mb | 4Mx36 | S7T4436U4M | QDR II+, ODT | 1.8V | 165FBGA |
| 144Mb | 8Mx18 | S7T4418U4M | QDR II+, ODT | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7A643630M | SPB | 2.3~3.5v | 100TQFP |
| 72Mb | 4Mx18 | S7A641830M | SPB | 2.3~3.5v | 100TQFP |
| 72Mb | 2Mx36 | S7B643635M | FT | 2.3~3.5v | 100TQFP |
| 72Mb | 4Mx18 | S7B641835M | FT | 2.3~3.5v | 100TQFP |
| 72Mb | 2Mx36 | S7N643631M | NT_SPB | 2.3~3.5v | 100TQFP |
| 72Mb | 4Mx18 | S7N641831M | NT_SPB | 2.3~3.5V | 100TQFP |
| 72Mb | 2Mx36 | S7M643635M | NT_FT | 2.3~3.5V | 100TQFP |
| 72Mb | 4Mx18 | S7M641835M | NT_FT | 2.3~3.5V | 100TQFP |
| 72Mb | 2Mx36 | S7S6436T4M | QDR II+ | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7S6418T4M | QDR II+ | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7T6436T2M | QDR II+, ODT | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7T6418T2M | QDR II+, ODT | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7T6436T4M | QDR II+, ODT | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7T6418T4M | QDR II+, ODT | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7R643682M | QDR II | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7R641882M | QDR II | 1.8V | 165FBGA |
| 72Mb | 8Mx9 | S7R640982M | QDR II | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7R643684M | QDR II | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7R641884M | QDR II | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7S6436U2M | QDR II+ | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7S6418U2M | QDR II+ | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7S6436U4M | QDR II+ | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7S6418U4M | QDR II+ | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7S6418U4M | QDR II+ | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7S6418U4M | QDR II+ | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7T6436U4M | QDR II+, ODT | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7T6418U4M | QDR II+, ODT | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7I643682M | DDR II | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7I641882M | DDR II | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7I643684M | DDR II | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7I641884M | DDR II | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7J643682M | DDR II, SIO | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7J641882M | DDR II, SIO | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7K6436T2M | DDR II+ | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7K6418T2M | DDR II+ | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7K6436U2M | DDR II+ | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7K6418U2M | DDR II+ | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7L6436T2M | DDR II+, ODT | 1.8V | 165FBGA |
| 72Mb | 4Mx18 | S7L6418T2M | DDR II+, ODT | 1.8V | 165FBGA |
| 72Mb | 2Mx36 | S7L6436U2M | DDR II+, ODT | 1.8V | 165FBGA |
關(guān)鍵字：netsol
上一篇：ISSI存儲器SRAM
深圳市英尚微電子有限公司，十年來專業(yè)致力代理分銷存儲器芯片IC, SRAM各有優勢、MRAM效果較好、pSRAM、 FLASH芯片持續、SDRAM（DDR1/DDR2/DDR3）等,為客人提供性價比更高的產(chǎn)品及方案等多個領域。
